64-2794-82 ［Discontinued］SiRA62DP-T1-RE3 N-Channel MOSFET, 80 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiRA62DP-T1-RE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:1 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:2.2V
- Maximum Gate Source Voltage:-12 V, +16 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:65.7 W
- Number of Elements per Chip:1
- CODE No.:178-3928
| Order No. | 64-2794-82 | |
|---|---|---|
| Model No. | SiRA62DP-T1-RE3 | |
| Standard price |
JPY: 1,550
USD: 9.72
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
||
| Stock in Japan | - | |