64-2794-80 [Discontinued]SiAA00DJ-T1-GE3 N-Channel MOSFET, 40 A, 25 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiAA00DJ-T1-GE3
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:7 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-12 V, +16 V
- Package Type:SC-70
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19.2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3924
| Order No. | 64-2794-80 | |
|---|---|---|
| Model No. | SiAA00DJ-T1-GE3 | |
| Standard price |
JPY: 1,900
USD: 11.91
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SiAA00DJ-T1-GE3 N-Channel MOSFET, 40 A, 25 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiAA00DJ-T1-GE3](https://aimg.as-1.co.jp/c/64/2794/80/64279480.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)