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［Discontinued］SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix　SiA110DJ-T1-GE3 64-2794-76 【AXEL GLOBAL】 アズワン

取扱点数300万点

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Vishay Siliconix

64-2794-76　［Discontinued］SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix　SiA110DJ-T1-GE3

Spec

Quantity:1bag(10pieces)
Channel Type:N
Maximum Continuous Drain Current:12 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:70 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:±20 V
Package Type:SC-70
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:19 W
Forward Transconductance:25S
CODE No.:178-3912

Order No. 64-2794-76

Model No.Model No. class="init"> ［Discontinued］SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix　SiA110DJ-T1-GE3 64-2794-76 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Vishay Siliconix

64-2794-76　［Discontinued］SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix　SiA110DJ-T1-GE3

印刷

仕様

Quantity:1bag(10pieces)
Channel Type:N
Maximum Continuous Drain Current:12 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:70 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:±20 V
Package Type:SC-70
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:19 W
Forward Transconductance:25S
CODE No.:178-3912

アズワン品番	64-2794-76
型番	SiA110DJ-T1-GE3
Standard price	JPY: 950 USD: 5.91 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1bag(10pieces)

在庫数	-

[$1]［Discontinued］SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix[/$1]