64-2794-76 ［Discontinued］SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA110DJ-T1-GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:70 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:SC-70
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Forward Transconductance:25S
- CODE No.:178-3912
| Order No. | 64-2794-76 | |
|---|---|---|
| Model No. | SiA110DJ-T1-GE3 | |
| Standard price |
JPY: 950
USD: 5.96
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |