64-2794-73 ［Discontinued］SIHA2N80E-GE3 N-Channel MOSFET, 2.8 A, 800 V E-Series, 3-Pin TO-220 Vishay Siliconix SIHA2N80E-GE3
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.8 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:2.75 Ω
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±30 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:29 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3907
| Order No. | 64-2794-73 | |
|---|---|---|
| Model No. | SIHA2N80E-GE3 | |
| Standard price |
JPY: 950
USD: 5.96
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |