64-2794-70 ［Discontinued］SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3
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［Discontinued］SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3 64-2794-70 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Vishay Siliconix 64-2794-70 ［Discontinued］SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:SC-70
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3901
Order No.Order No.ss="init"> ［Discontinued］SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3 64-2794-70 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Vishay Siliconix 64-2794-70 ［Discontinued］SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3
仕様
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:SC-70
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3901
アズワン品番 64-2794-70 Model No. SiA106DJ-T1-GE3 標準価格 JPY: 1,590 USD: 9.97 Excange rate 1USD= 159.53JPY
Valid price in Japan入り数 1bag(10pieces) 
Stock in Japan - -
