Vishay Siliconix

64-2794-70 [Discontinued]SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3

Spec

  • Quantity:1bag(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:12 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:20 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:±20 V
  • Package Type:SC-70
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:19 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:178-3901
  •  
Order No.Order No.ss="init"> [Discontinued]SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3 64-2794-70 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Vishay Siliconix

64-2794-70 [Discontinued]SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3

仕様

  • Quantity:1bag(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:12 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:20 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:±20 V
  • Package Type:SC-70
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:19 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:178-3901
  •  
アズワン品番 64-2794-70
Model No. SiA106DJ-T1-GE3
標準価格 JPY: 1,590 USD: 9.97
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1bag(10pieces)
  <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
Stock in Japan -