64-2794-69 ［Discontinued］SiSS02DN-T1-GE3 N-Channel MOSFET, 80 A, 25 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:1 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:2.2V
- Maximum Gate Source Voltage:-12 V, +16 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:65.7 W
- Series:TrenchFET
- CODE No.:178-3899
| Order No. | 64-2794-69 | |
|---|---|---|
| Model No. | SiSS02DN-T1-GE3 | |
| Standard price |
JPY: 1,730
USD: 10.84
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |