64-2794-66 [Discontinued]SQJ504EP-T1_GE3 Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SQJ504EP-T1_GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 (N Channel) A, 30 (P Channel) A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:30 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:34 (N Channel) W, 34 (P Channel) W
- Typical Turn-Off Delay Time:21 (N Channel) ns, 45 (P Channel) ns
- CODE No.:178-3893
| Order No. | 64-2794-66 | |
|---|---|---|
| Model No. | SQJ504EP-T1_GE3 | |
| Standard price |
JPY: 2,680
USD: 16.80
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SQJ504EP-T1_GE3 Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SQJ504EP-T1_GE3](https://aimg.as-1.co.jp/c/64/2794/66/64279466.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)