Vishay Siliconix

64-2794-64　［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix　SiSH617DN-T1-GE3

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仕様

Quantity:1bag(25pieces)
Channel Type:P
Maximum Continuous Drain Current:35 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:20 mΩ
Maximum Gate Threshold Voltage:2.5V
Minimum Gate Threshold Voltage:1.2V
Maximum Gate Source Voltage:±25 V
Package Type:1212
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:52 W
Minimum Operating Temperature:-55 °C
CODE No.:178-3888

Order No. 64-2794-64

Model No. SiSH617DN-T1-GE3

Standard priceStandard pricess="init"> ［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix　SiSH617DN-T1-GE3 64-2794-64 【AXEL GLOBAL】 アズワン

取扱点数300万点

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Vishay Siliconix

64-2794-64　［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix　SiSH617DN-T1-GE3

印刷

仕様

Quantity:1bag(25pieces)
Channel Type:P
Maximum Continuous Drain Current:35 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:20 mΩ
Maximum Gate Threshold Voltage:2.5V
Minimum Gate Threshold Voltage:1.2V
Maximum Gate Source Voltage:±25 V
Package Type:1212
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:52 W
Minimum Operating Temperature:-55 °C
CODE No.:178-3888

アズワン品番	64-2794-64
型番	SiSH617DN-T1-GE3
標準価格	JPY: 2,520 USD: 15.81 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(25pieces)

在庫数	-

This page is the page of ［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

Explore AXELExplore AXEL"> ［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix　SiSH617DN-T1-GE3 64-2794-64 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Vishay Siliconix

64-2794-64　［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix　SiSH617DN-T1-GE3

印刷

仕様

Quantity:1bag(25pieces)
Channel Type:P
Maximum Continuous Drain Current:35 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:20 mΩ
Maximum Gate Threshold Voltage:2.5V
Minimum Gate Threshold Voltage:1.2V
Maximum Gate Source Voltage:±25 V
Package Type:1212
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:52 W
Minimum Operating Temperature:-55 °C
CODE No.:178-3888

アズワン品番	64-2794-64
型番	SiSH617DN-T1-GE3
標準価格	JPY: 2,520 USD: 15.81 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(25pieces)

在庫数	-

[$1]［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix[/$1]

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