64-2794-64 ［Discontinued］SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:35 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:±25 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:52 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3888
| Order No. | 64-2794-64 | |
|---|---|---|
| Model No. | SiSH617DN-T1-GE3 | |
| Standard price |
JPY: 2,520
USD: 15.80
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
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| Stock in Japan | - | |