64-2794-59 Si7190ADP-T1-RE3 N-Channel MOSFET, 14.4 A, 250 V TrenchFET, 8-Pin SO-8 Vishay Siliconix Si7190ADP-T1-RE3
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:14.4 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:110 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:56.8 W
- Number of Elements per Chip:1
- CODE No.:178-3875
| Order No. | 64-2794-59 | |
|---|---|---|
| Model No. | Si7190ADP-T1-RE3 | |
| Standard price |
JPY: 1,650
USD: 10.34
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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