64-2794-55 [Discontinued]Si7172ADP-T1-RE3 N-Channel MOSFET, 17.2 A, 200 V TrenchFET, 8-Pin SO-8 Vishay Siliconix Si7172ADP-T1-RE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:17.2 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:80 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:52 W
- Typical Turn-On Delay Time:11 ns
- CODE No.:178-3865
| Order No. | 64-2794-55 | |
|---|---|---|
| Model No. | Si7172ADP-T1-RE3 | |
| Standard price |
JPY: 1,230
USD: 7.71
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]Si7172ADP-T1-RE3 N-Channel MOSFET, 17.2 A, 200 V TrenchFET, 8-Pin SO-8 Vishay Siliconix Si7172ADP-T1-RE3](https://aimg.as-1.co.jp/c/64/2794/55/64279455.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)