64-2794-52 SQJ415EP-T1_GE3 P-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SQJ415EP-T1_GE3
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:45 W
- Typical Turn-Off Delay Time:67 ns
- CODE No.:178-3859
| Order No. | 64-2794-52 | |
|---|---|---|
| Model No. | SQJ415EP-T1_GE3 | |
| Standard price |
JPY: 3,750
USD: 23.51
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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