64-2794-50 Si2319DDS-T1-GE3 P-Channel MOSFET, 3.6 A, 40 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3
Spec
- Quantity:1bag(50pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.6 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:100 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3853
| Order No. | 64-2794-50 | |
|---|---|---|
| Model No. | Si2319DDS-T1-GE3 | |
| Standard price |
JPY: 4,910
USD: 30.78
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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