64-2794-42 SQJ431AEP-T1_GE3 P-Channel MOSFET, 9.4 A, 200 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SQJ431AEP-T1_GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:9.4 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:760 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:68 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3718
| Order No. | 64-2794-42 | |
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| Model No. | SQJ431AEP-T1_GE3 | |
| Standard price |
JPY: 430,000
USD: 2,697.28
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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