64-2794-33 SQ2364EES-T1_GE3 N-Channel MOSFET, 2 A, 60 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:600 mΩ
- Maximum Gate Threshold Voltage:0.46V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3708
| Order No. | 64-2794-33 | |
|---|---|---|
| Model No. | SQ2364EES-T1_GE3 | |
| Standard price |
JPY: 198,000
USD: 1,241.15
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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