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Contact usSearchlass="init"> [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3 64-2794-25 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
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  • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
Vishay Siliconix

64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

  • PrintPrintlass="init"> [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3 64-2794-25 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
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    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
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    • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
    Vishay Siliconix

    64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

    • 印刷
    • PDF
    • [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

    Spec

    • Quantity:1set(3000pieces)
    • Channel Type:P
    • Maximum Continuous Drain Current:35 A
    • Maximum Drain Source Voltage:30 V
    • Maximum Drain Source Resistance:20 mΩ
    • Maximum Gate Threshold Voltage:2.5V
    • Minimum Gate Threshold Voltage:1.2V
    • Maximum Gate Source Voltage:±25 V
    • Package Type:1212
    • Mounting Type:Surface Mount
    • Pin Count:8
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:52 W
    • Minimum Operating Temperature:-55 °C
    • CODE No.:178-3697
    •  
    Order No. 64-2794-25
    Model No. SiSH617DN-T1-GE3
    標準価格 JPY: 162,550 USD: 1,011.39
    Excange rate 1USD= 160.72JPY
    Valid price in Japan
    Quantity 1set(3000pieces)
      Discontinued
    Stock in Japan -

    This page is the page of [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.This page is the page of [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation. A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3 64-2794-25 【AXEL GLOBAL】 アズワン

    AS ONE AS ONE

    取扱点数300万点
    How to use
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    Contact us
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    • AXEL GLOBAL
    • カテゴリ一覧
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    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
    • AXEL GLOBAL
    • カテゴリ一覧
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    • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
    Vishay Siliconix

    64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

    • 印刷
    • PDF
    • [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

    仕様

    • Quantity:1set(3000pieces)
    • Channel Type:P
    • Maximum Continuous Drain Current:35 A
    • Maximum Drain Source Voltage:30 V
    • Maximum Drain Source Resistance:20 mΩ
    • Maximum Gate Threshold Voltage:2.5V
    • Minimum Gate Threshold Voltage:1.2V
    • Maximum Gate Source Voltage:±25 V
    • Package Type:1212
    • Mounting Type:Surface Mount
    • Pin Count:8
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:52 W
    • Minimum Operating Temperature:-55 °C
    • CODE No.:178-3697
    •  
    アズワン品番 64-2794-25
    型番 SiSH617DN-T1-GE3
    標準価格 JPY: 162,550 USD: 1,011.39
    Excange rate 1USD= 160.72JPY
    Valid price in Japan
    入り数 1set(3000pieces)
      <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
    在庫数 -

    [$1][Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix[/$1]

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    • User’s GuideASONEs="init"> [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3 64-2794-25 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

      AS ONE AS ONE

      Listed products : 3 milion products
      How to use
      Cách sử dụng
      Contact us
      All Categories
      Contact us
      Quote Other Requests
      • AXEL GLOBAL
      • Categories
      • Lab Instruments & Supplies
      • Electronic/Electrical Parts and Controll Equipments
      • Electronics Components, Power & Connectors
      • Semiconductors
      • Discrete Semiconductors
      • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
      • AXEL GLOBAL
      • Categories
      • Lab Instruments & Supplies
      • Electronic/Electrical Parts and Controll Equipments
      • RS Components
      • 64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
      Vishay Siliconix

      64-2794-25 [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

      • Print
      • PDF
      • [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

      Spec

      • Quantity:1set(3000pieces)
      • Channel Type:P
      • Maximum Continuous Drain Current:35 A
      • Maximum Drain Source Voltage:30 V
      • Maximum Drain Source Resistance:20 mΩ
      • Maximum Gate Threshold Voltage:2.5V
      • Minimum Gate Threshold Voltage:1.2V
      • Maximum Gate Source Voltage:±25 V
      • Package Type:1212
      • Mounting Type:Surface Mount
      • Pin Count:8
      • Channel Mode:Enhancement
      • Category:Power MOSFET
      • Maximum Power Dissipation:52 W
      • Minimum Operating Temperature:-55 °C
      • CODE No.:178-3697
      •  
      Order No. 64-2794-25
      Model No. SiSH617DN-T1-GE3
      Standard price JPY: 162,550 USD: 1,011.39
      Excange rate 1USD= 160.72JPY
      Valid price in Japan
      Quantity 1set(3000pieces)
        Discontinued
      Stock in Japan -

      This page is the page of [Discontinued]SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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