64-2794-24 ［Discontinued］SiSH402DN-T1-GE3 N-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH402DN-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:35 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:8 mΩ
- Maximum Gate Threshold Voltage:1.15V
- Minimum Gate Threshold Voltage:2.2V
- Maximum Gate Source Voltage:±20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:52 W
- Height:1.07mm
- CODE No.:178-3696
| Order No. | 64-2794-24 | |
|---|---|---|
| Model No. | SiSH402DN-T1-GE3 | |
| Standard price |
JPY: 171,000
USD: 1,072.64
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |