64-2794-23 ［Discontinued］SISC06DN-T1-GE3 Dual N-Channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SISC06DN-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:4 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:46.3 W
- Typical Turn-On Delay Time:29 ns
- CODE No.:178-3694
| Order No. | 64-2794-23 | |
|---|---|---|
| Model No. | SISC06DN-T1-GE3 | |
| Standard price |
JPY: 177,330
USD: 1,111.58
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |