64-2794-22 SiS110DN-T1-GE3 N-Channel MOSFET, 14.2 A, 100 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiS110DN-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:14.2 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:70 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:4V
- Maximum Gate Source Voltage:±20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:24 W
- Transistor Material:Si
- CODE No.:178-3693
| Order No. | 64-2794-22 | |
|---|---|---|
| Model No. | SiS110DN-T1-GE3 | |
| Standard price |
JPY: 193,000
USD: 1,209.80
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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