64-2794-21 ［Discontinued］SiS106DN-T1-GE3 N-Channel MOSFET, 16 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiS106DN-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:16 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:4V
- Maximum Gate Source Voltage:±20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:24 W
- Forward Diode Voltage:1.2V
- CODE No.:178-3692
| Order No. | 64-2794-21 | |
|---|---|---|
| Model No. | SiS106DN-T1-GE3 | |
| Standard price |
JPY: 194,000
USD: 1,207.07
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |