64-2794-18 ［Discontinued］SiRA10BDP-T1-GE3 N-Channel MOSFET, 60 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiRA10BDP-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:5 mΩ
- Maximum Gate Threshold Voltage:1.2V
- Minimum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:43 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3688
| Order No. | 64-2794-18 | |
|---|---|---|
| Model No. | SiRA10BDP-T1-GE3 | |
| Standard price |
JPY: 133,000
USD: 833.70
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |