64-2794-17 SiR188DP-T1-RE3 N-Channel MOSFET, 60 A, 60 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiR188DP-T1-RE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:3.6V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:65.7 W
- Number of Elements per Chip:1
- CODE No.:178-3687
| Order No. | 64-2794-17 | |
|---|---|---|
| Model No. | SiR188DP-T1-RE3 | |
| Standard price |
JPY: 473,000
USD: 2,943.01
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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