64-2794-16 ［Discontinued］SiR108DP-T1-RE3 N-Channel MOSFET, 45 A, 100 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiR108DP-T1-RE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:45 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:10 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:3.6V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:65.7 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3685
| Order No. | 64-2794-16 | |
|---|---|---|
| Model No. | SiR108DP-T1-RE3 | |
| Standard price |
JPY: 331,020
USD: 2,074.97
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |