64-2794-13 SiDR392DP-T1-GE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiDR392DP-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:900 μΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:+20 V, +6 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3670
| Order No. | 64-2794-13 | |
|---|---|---|
| Model No. | SiDR392DP-T1-GE3 | |
| Standard price |
JPY: 968,000
USD: 6,022.90
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|