64-2794-11 ［Discontinued］SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA110DJ-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:70 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:SC-70
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Height:1mm
- CODE No.:178-3668
| Order No. | 64-2794-11 | |
|---|---|---|
| Model No. | SiA110DJ-T1-GE3 | |
| Standard price |
JPY: 166,000
USD: 1,041.28
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |