64-2794-10 [Discontinued]SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:SC-70
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Number of Elements per Chip:1
- CODE No.:178-3667
| Order No. | 64-2794-10 | |
|---|---|---|
| Model No. | SiA106DJ-T1-GE3 | |
| Standard price |
JPY: 223,000
USD: 1,387.51
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SiA106DJ-T1-GE3](https://aimg.as-1.co.jp/c/64/2794/10/64279410.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)