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• 64-2794-06 Si2319DDS-T1-GE3 P-Channel MOSFET, 3.6 A, 40 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix　Si2319DDS-T1-GE3

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• 64-2794-06 Si2319DDS-T1-GE3 P-Channel MOSFET, 3.6 A, 40 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix　Si2319DDS-T1-GE3

Vishay Siliconix

64-2794-06　Si2319DDS-T1-GE3 P-Channel MOSFET, 3.6 A, 40 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix　Si2319DDS-T1-GE3

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仕様

• Quantity:1set(3000pieces)
• Channel Type:P
• Maximum Continuous Drain Current:3.6 A
• Maximum Drain Source Voltage:40 V
• Maximum Drain Source Resistance:100 mΩ
• Maximum Gate Threshold Voltage:2.5V
• Minimum Gate Threshold Voltage:1V
• Maximum Gate Source Voltage:±20 V
• Package Type:SOT-23
• Mounting Type:Surface Mount
• Pin Count:3
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:1.7 W
• Transistor Material:Si
• CODE No.:178-3663
•  

Order No.	64-2794-06
型番	Si2319DDS-T1-GE3
標準価格	JPY: 117,000 USD: 733.91 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1set(3000pieces)
Stock in Japan
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