64-2780-10 [Discontinued]RQ3E150GNTB N-Channel MOSFET, 39 A, 30 V RQ3E150GN, 8-Pin HSMT ROHM RQ3E150GNTB
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:39 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.1 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:±20 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:17 W
- Typical Turn-Off Delay Time:34.4 ns
- CODE No.:177-6730
| Order No. | 64-2780-10 | |
|---|---|---|
| Model No. | RQ3E150GNTB | |
| Standard price |
JPY: 1,000
USD: 6.27
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RQ3E150GNTB N-Channel MOSFET, 39 A, 30 V RQ3E150GN, 8-Pin HSMT ROHM RQ3E150GNTB](https://aimg.as-1.co.jp/c/64/2780/10/64278010.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)