64-2779-90 [Discontinued]RSJ650N10TL N-Channel MOSFET, 65 A, 100 V RSJ650N10, 3-Pin D2PAK ROHM RSJ650N10TL
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:65 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:9.8 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:TO-263
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:100 W
- Forward Diode Voltage:1.5V
- CODE No.:177-6690
| Order No. | 64-2779-90 | |
|---|---|---|
| Model No. | RSJ650N10TL | |
| Standard price |
JPY: 940
USD: 5.89
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RSJ650N10TL N-Channel MOSFET, 65 A, 100 V RSJ650N10, 3-Pin D2PAK ROHM RSJ650N10TL](https://aimg.as-1.co.jp/c/64/2779/90/64277990.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)