64-2779-72 ［Discontinued］RQ3E100BNTB N-Channel MOSFET, 21 A, 30 V RQ3E100BN, 8-Pin HSMT ROHM RQ3E100BNTB
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:21 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:10.4 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:15 W
- Typical Input Capacitance @ Vds:1100 pF @ 15 V
- CODE No.:177-6623
| Order No. | 64-2779-72 | |
|---|---|---|
| Model No. | RQ3E100BNTB | |
| Standard price |
JPY: 690
USD: 4.29
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |