64-2779-70 ［Discontinued］RF4E080BNTR N-Channel MOSFET, 8 A, 30 V RF4E080BN, 8-Pin HUML2020L ROHM RF4E080BNTR
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:17.6 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:HUML2020L
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Typical Turn-Off Delay Time:33 ns
- CODE No.:177-6611
| Order No. | 64-2779-70 | |
|---|---|---|
| Model No. | RF4E080BNTR | |
| Standard price |
JPY: 750
USD: 4.70
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
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| Stock in Japan | - | |