64-2779-65 ［Discontinued］RQ3E100ATTB P-Channel MOSFET, 31 A, 30 V RQ3E100AT, 8-Pin HSMT ROHM RQ3E100ATTB
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:11.4 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:17 W
- Typical Turn-Off Delay Time:85 ns
- CODE No.:177-6577
| Order No. | 64-2779-65 | |
|---|---|---|
| Model No. | RQ3E100ATTB | |
| Standard price |
JPY: 1,650
USD: 10.27
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |