64-2778-92 ［Discontinued］RQ3E100GNTB N-Channel MOSFET, 21 A, 30 V RQ3E100GN, 8-Pin HSMT ROHM RQ3E100GNTB
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:21 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:11.7 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:±20 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:15 W
- Typical Turn-Off Delay Time:22.4 ns
- CODE No.:177-6284
| Order No. | 64-2778-92 | |
|---|---|---|
| Model No. | RQ3E100GNTB | |
| Standard price |
JPY: 750
USD: 4.71
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
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| Stock in Japan | - | |