64-2645-79 ［Discontinued］RQ3E120BNTB N-Channel MOSFET, 21 A, 30 V RQ3E120BN, 8-Pin HSMT ROHM RQ3E120BNTB
Spec
- Quantity:1bag(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:21 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:11.9 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:16 W
- Minimum Operating Temperature:-55 °C
- CODE No.:171-9833
| Order No. | 64-2645-79 | |
|---|---|---|
| Model No. | RQ3E120BNTB | |
| Standard price |
JPY: 2,080
USD: 13.04
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(50pieces) | |
|
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| Stock in Japan | - | |