64-2645-29 [Discontinued]RS1E350BNTB N-Channel MOSFET, 80 A, 30 V RS1E350BN, 8-Pin HSOP ROHM RS1E350BNTB
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:2.5 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:HSOP
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:35 W
- Maximum Operating Temperature:+150 °C
- CODE No.:171-9751
| Order No. | 64-2645-29 | |
|---|---|---|
| Model No. | RS1E350BNTB | |
| Standard price |
JPY: 241,000
USD: 1,510.69
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RS1E350BNTB N-Channel MOSFET, 80 A, 30 V RS1E350BN, 8-Pin HSOP ROHM RS1E350BNTB](https://aimg.as-1.co.jp/c/64/2645/29/64264529.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)