64-2644-99 [Discontinued]RQ3E180AJTB N-Channel MOSFET, 30 A, 30 V RQ3E180AJ, 8-Pin HSMT ROHM RQ3E180AJTB
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:5.8 mΩ
- Maximum Gate Threshold Voltage:1.5V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:±12 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:30 W
- Maximum Operating Temperature:+150 °C
- CODE No.:171-9719
| Order No. | 64-2644-99 | |
|---|---|---|
| Model No. | RQ3E180AJTB | |
| Standard price |
JPY: 172,000
USD: 1,070.18
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RQ3E180AJTB N-Channel MOSFET, 30 A, 30 V RQ3E180AJ, 8-Pin HSMT ROHM RQ3E180AJTB](https://aimg.as-1.co.jp/c/64/2644/99/64264499.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)