64-2618-76 [Discontinued]IPD50N10S3L16ATMA1 N-Channel MOSFET, 50 A, 100 V IPD50N10S3L-16, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:50 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:19.9 mΩ
- Maximum Gate Threshold Voltage:2.4V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:20 V
- Package Type:TO-252
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:100 W
- Minimum Operating Temperature:-55 °C
- CODE No.:170-2270
| Order No. | 64-2618-76 | |
|---|---|---|
| Model No. | IPD50N10S3L16ATMA1 | |
| Standard price |
JPY: 237,000
USD: 1,485.61
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPD50N10S3L16ATMA1 N-Channel MOSFET, 50 A, 100 V IPD50N10S3L-16, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1](https://aimg.as-1.co.jp/c/64/2618/76/64261876.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)