Infineon

64-2618-70　［Discontinued］IRFL4310TRPBF N-Channel MOSFET, 2.2 A, 100 V IRFL4310PbF, 3 + Tab-Pin SOT-223 Infineon　IRFL4310TRPBF

印刷

特徴

N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:2.2 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:200 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:20 V
Package Type:SOT-223
Mounting Type:Surface Mount
Pin Count:3 + Tab
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.1 W
Minimum Operating Temperature:-55 °C
CODE No.:170-2257

アズワン品番	64-2618-70
型番	IRFL4310TRPBF
標準価格	JPY: 80,500 USD: 504.61 Excange rate 1USD= 159.53JPY Valid price in Japan
入り数	1set(2500pieces)

在庫数	-

64-2618-70　［Discontinued］IRFL4310TRPBF N-Channel MOSFET, 2.2 A, 100 V IRFL4310PbF, 3 + Tab-Pin SOT-223 Infineon　IRFL4310TRPBF

Features

Spec

64-2618-70　［Discontinued］IRFL4310TRPBF N-Channel MOSFET, 2.2 A, 100 V IRFL4310PbF, 3 + Tab-Pin SOT-223 Infineon　IRFL4310TRPBF

特徴

仕様