64-2554-35 [Discontinued]SI3493BDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP6 Vishay SI3493BDV-T1-GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:45 mΩ
- Maximum Gate Threshold Voltage:-0.9V
- Minimum Gate Threshold Voltage:-0.4V
- Maximum Gate Source Voltage:±8 V
- Package Type:TSOP6
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.97 W
- Length:3.1mm
- CODE No.:152-6371
| Order No. | 64-2554-35 | |
|---|---|---|
| Model No. | SI3493BDV-T1-GE3 | |
| Standard price |
JPY: 800
USD: 5.02
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI3493BDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP6 Vishay SI3493BDV-T1-GE3](https://aimg.as-1.co.jp/c/64/2554/35/64255435.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)