64-2191-63 [Discontinued]SCT3080ALGC11 SiC N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247N ROHM SCT3080ALGC11
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:105.6 mΩ
- Maximum Gate Threshold Voltage:5.6V
- Minimum Gate Threshold Voltage:2.7V
- Maximum Gate Source Voltage:22 V
- Package Type:TO-247N
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:165 W
- Number of Elements per Chip:1
- CODE No.:148-6947
| Order No. | 64-2191-63 | |
|---|---|---|
| Model No. | SCT3080ALGC11 | |
| Standard price |
JPY: 46,900
USD: 291.81
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SCT3080ALGC11 SiC N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247N ROHM SCT3080ALGC11](https://aimg.as-1.co.jp/c/64/2191/63/64219163.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)