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ROHM

64-2191-62　［Discontinued］SCT2H12NYTB SiC N-Channel MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268 ROHM　SCT2H12NYTB

Spec

  • Quantity:1set(800pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:4 A
  • Maximum Drain Source Voltage:1700 V
  • Maximum Drain Source Resistance:1.71 Ω
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:1.6V
  • Maximum Gate Source Voltage:22 V
  • Package Type:TO-268
  • Mounting Type:Surface Mount
  • Pin Count:2 + Tab
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:44 W
  • Maximum Operating Temperature:+175 °C
  • CODE No.:148-6940
  •  
Order No. 64-2191-62
Model No. SCT2H12NYTB
Standard price JPY: 512,000 USD: 3,185.67
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(800pieces)
  Discontinued
Stock in Japan -

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