64-2191-59 [Discontinued]RQ6E055BNTCR Dual N-Channel MOSFET, 5.5 A, 30 V, 6-Pin TSMT ROHM RQ6E055BNTCR
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:39 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:TSMT
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.25 W
- Number of Elements per Chip:2
- CODE No.:148-6935
| Order No. | 64-2191-59 | |
|---|---|---|
| Model No. | RQ6E055BNTCR | |
| Standard price |
JPY: 66,800
USD: 415.63
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RQ6E055BNTCR Dual N-Channel MOSFET, 5.5 A, 30 V, 6-Pin TSMT ROHM RQ6E055BNTCR](https://aimg.as-1.co.jp/c/64/2191/59/64219159.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)