64-2170-76 IXFN170N65X2 N-Channel MOSFET, 170 A, 650 V HiperFET, 4-Pin SOT227 IXYS IXFN170N65X2
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:170 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:13 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±30 V
- Package Type:SOT227
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.17 kW
- Minimum Operating Temperature:-55 °C
- CODE No.:146-4405
| Order No. | 64-2170-76 | |
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| Model No. | IXFN170N65X2 | |
| Standard price |
JPY: 14,100
USD: 87.73
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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