64-2170-68 IXFN110N85X N-Channel MOSFET, 110 A, 850 V HiperFET, 4-Pin SOT227 IXYS IXFN110N85X
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:110 A
- Maximum Drain Source Voltage:850 V
- Maximum Drain Source Resistance:33 mΩ
- Maximum Gate Threshold Voltage:5.5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±30 V
- Package Type:SOT227
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.17 kW
- Width:25.07mm
- CODE No.:146-4396
| Order No. | 64-2170-68 | |
|---|---|---|
| Model No. | IXFN110N85X | |
| Standard price |
JPY: 15,700
USD: 97.69
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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