64-2170-67 IXFN90N85X N-Channel MOSFET, 90 A, 850 V HiperFET, 4-Pin SOT227 IXYS IXFN90N85X
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:90 A
- Maximum Drain Source Voltage:850 V
- Maximum Drain Source Resistance:41 mΩ
- Maximum Gate Threshold Voltage:5.5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±30 V
- Package Type:SOT227
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.2 kW
- Height:9.6mm
- CODE No.:146-4386
| Order No. | 64-2170-67 | |
|---|---|---|
| Model No. | IXFN90N85X | |
| Standard price |
JPY: 13,100
USD: 81.51
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|