64-2170-66 [Discontinued]IXFH80N65X2-4 N-Channel MOSFET, 80 A, 650 V HiperFET, 3-Pin TO-247 IXYS IXFH80N65X2-4
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:38 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±30 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:890 W
- Minimum Operating Temperature:-55 °C
- CODE No.:146-4385
| Order No. | 64-2170-66 | |
|---|---|---|
| Model No. | IXFH80N65X2-4 | |
| Standard price |
JPY: 1,520
USD: 9.46
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]IXFH80N65X2-4 N-Channel MOSFET, 80 A, 650 V HiperFET, 3-Pin TO-247 IXYS IXFH80N65X2-4](https://aimg.as-1.co.jp/c/64/2170/66/64217066.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)