IXYS

64-2170-65 IXFB90N85X N-Channel MOSFET, 90 A, 850 V HiperFET, 3-Pin PLUS264 IXYS IXFB90N85X

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:90 A
  • Maximum Drain Source Voltage:850 V
  • Maximum Drain Source Resistance:41 mΩ
  • Maximum Gate Threshold Voltage:5.5V
  • Minimum Gate Threshold Voltage:3.5V
  • Maximum Gate Source Voltage:±30 V
  • Package Type:PLUS264
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:1.79 kW
  • Maximum Operating Temperature:+150 °C
  • CODE No.:146-4383
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Order No. 64-2170-65
Model No. IXFB90N85X
Standard price JPY: 8,480 USD: 52.76
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock