64-2170-62 IXFT60N65X2HV N-Channel MOSFET, 60 A, 650 V HiperFET, 3-Pin TO-268HV IXYS IXFT60N65X2HV
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:52 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±30 V
- Package Type:TO-268HV
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:780 W
- Minimum Operating Temperature:-55 °C
- CODE No.:146-4378
| Order No. | 64-2170-62 | |
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| Model No. | IXFT60N65X2HV | |
| Standard price |
JPY: 3,030
USD: 18.85
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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