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IXYS

64-2169-96　IXFN170N65X2 N-Channel MOSFET, 170 A, 650 V HiperFET, 4-Pin SOT227 IXYS　IXFN170N65X2

Spec

  • Quantity:1set(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:170 A
  • Maximum Drain Source Voltage:650 V
  • Maximum Drain Source Resistance:13 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Minimum Gate Threshold Voltage:3.5V
  • Maximum Gate Source Voltage:±30 V
  • Package Type:SOT227
  • Mounting Type:Surface Mount
  • Pin Count:4
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:1.17 kW
  • Typical Turn-Off Delay Time:133 ns
  • CODE No.:146-4241
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Order No. 64-2169-96
Model No. IXFN170N65X2
Standard price JPY: 141,000 USD: 883.85
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(10pieces)
Stock in Japan
Supplier Stock

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