64-2169-90 IXFT60N65X2HV N-Channel MOSFET, 60 A, 650 V HiperFET, 3-Pin TO-268HV IXYS IXFT60N65X2HV
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64-2169-90 IXFT60N65X2HV N-Channel MOSFET, 60 A, 650 V HiperFET, 3-Pin TO-268HV IXYS IXFT60N65X2HV 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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64-2169-90 IXFT60N65X2HV N-Channel MOSFET, 60 A, 650 V HiperFET, 3-Pin TO-268HV IXYS IXFT60N65X2HV
-
仕様
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:52 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±30 V
- Package Type:TO-268HV
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:780 W
- Dimensions:16.05 x 15.15 x 5.1mm
- CODE No.:146-4235
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Order No.
64-2169-90
型番
IXFT60N65X2HV
標準価格
JPY: 47,100
USD: 295.45
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1set(30pieces)
Stock in Japan
Supplier Stock
64-2169-90 IXFT60N65X2HV N-Channel MOSFET, 60 A, 650 V HiperFET, 3-Pin TO-268HV IXYS IXFT60N65X2HV
仕様
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:52 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±30 V
- Package Type:TO-268HV
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:780 W
- Dimensions:16.05 x 15.15 x 5.1mm
- CODE No.:146-4235
| Order No. | 64-2169-90 | |
|---|---|---|
| 型番 | IXFT60N65X2HV | |
| 標準価格 |
JPY: 47,100
USD: 295.45
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(30pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|