64-2168-97 FDMS86183 Dual N-Channel MOSFET, 51 A, 100 V PowerTrench, 8-Pin PQFN ON Semiconductor FDMS86183
Features
- N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:51 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:12.8 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:±20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:DC/DC Converter
- Maximum Power Dissipation:63 W
- Number of Elements per Chip:2
- CODE No.:146-4116
| Order No. | 64-2168-97 | |
|---|---|---|
| Model No. | FDMS86183 | |
| Standard price |
JPY: 6,820
USD: 42.43
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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